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PDF STW48NM60N Data sheet ( Hoja de datos )
| Número de pieza | STW48NM60N | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STW48NM60N
N-channel 600 V, 0.055 Ω typ., 44 A MDmesh™ II Power MOSFET
in a TO-247 package
Datasheet — production data
Features
Order codes
STW48NM60N
VDSS @
TJmax
650 V
RDS(on)
max
< 0.07 Ω
ID
44 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
'
*
6
$0Y
Table 1. Device summary
Order code
Marking
STW48NM60N
48NM60N
Package
TO-247
Packaging
Tube
February 2013
This is information on a product in full production.
Doc ID 18313 Rev 5
1/13
www.st.com
13
1 page  
STW48NM60N
Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
(1)
ISDM Source-drain current (pulsed)
44 A
-
176 A
(2)
VSD Forward on voltage
ISD = 44 A, VGS = 0 - 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 44 A, di/dt = 100 A/μs
472
VDD = 100 V
(see Figure 16)
- 10.5
44.5
ns
μC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 44 A, di/dt = 100 A/μs
VDD = 100 V, Tj = 150 °C
(see Figure 16)
-
568
14
50
ns
μC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Doc ID 18313 Rev 5
5/13
5 Page 
STW48NM60N
Figure 20. TO-247 drawing
Package mechanical data
0075325_G
Doc ID 18313 Rev 5
11/13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STW48NM60N.PDF ] | |
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