|
|
PDF STW50N65DM2AG Data sheet ( Hoja de datos )
| Número de pieza | STW50N65DM2AG | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STW50N65DM2AG (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
STW50N65DM2AG
Automotive-grade N-channel 650 V, 0.070 Ω typ., 38 A
Power MOSFET MDmesh™ DM2 in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
STW50N65DM2AG
VDS
650 V
RDS(on)
max.
0.087 Ω
ID
38 A
PTOT
300 W
Designed for automotive applications and
AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STW50N65DM2AG
Table 1: Device summary
Marking
50N65DM2
Package
TO-247
Packing
Tube
July 2015
DocID028101 Rev 1
This is information on a product in full production.
1/12
www.st.com
1 page  
STW50N65DM2AG
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD(2)
trr
Qrr
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
IRRM Reverse recovery current
VGS = 0 V, ISD = 38 A
ISD = 38 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive
load switching and diode
recovery times")
- 38 A
- 152 A
- 1.6 V
- 150
ns
- 0.96
µC
- 12.8
A
trr Reverse recovery time
ISD = 38 A, di/dt = 100 A/µs,
- 245
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
-
2.7
IRRM
Reverse recovery current
inductive load switching and
diode recovery times")
-
22
ns
µC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID028101 Rev 1
5/12
5 Page 
STW50N65DM2AG
Revision history
5 Revision history
Date
09-Jul-2015
Table 10: Document revision history
Revision
Changes
1 Initial release.
DocID028101 Rev 1
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STW50N65DM2AG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STW50N65DM2AG | N-CHANNEL MOSFET | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |