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PDF STW55NM60N Data sheet ( Hoja de datos )
| Número de pieza | STW55NM60N | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STW55NM60N
N-channel 600 V, 0.047 Ω, 51 A, MDmesh™ II Power MOSFET
TO-247
Features
Type
STW55NM60N
VDSS
(@Tjmax)
650 V
RDS(on)
max
< 0.060 Ω
ID
51 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STW55NM60N
W55NM60N
Package
TO-247
Packaging
Tube
July 2008
Rev 4
1/12
www.st.com
12
1 page  
STW55NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 25.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 14)
Min. Typ. Max. Unit
40 ns
30 ns
225 ns
70 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 25.5 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 51 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 16)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 51 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
51
204
1.3
600
15
51
750
18
51
A
A
V
ns
µC
A
ns
µC
A
5/12
5 Page 
STW55NM60N
5 Revision history
Revision history
Table 9. Document revision history
Date
Revision
Changes
06-Nov-2007
19-Dec-2007
16-Jan-2008
31-Jul-2008
1 Initial release
2 Figure 9: Capacitance variations has been updated
3 Document status promoted from preliminary data to datasheet.
4 EAS value has been updated in Table 4
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STW55NM60N.PDF ] | |
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