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Datasheet STW56N60DM2-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
STW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | STW-195 | Retaining Ring Spec Sheet www.americanringmfg.com
STW-195 Retaining Ring Spec Sheet
Part Number: STW-195 STW - External JIS B 2804 Retaining Rings
Ring Specs
(D) Free Diameter: (t) Thickness: (b) Radial Wall:
Groove Specs:
(B) Application Diameter: (G) Groove Diameter: (W) Groove Width: Groove Depth:
Other Specs
Approximate  AmericanRing data | | |
| 2 | STW10NA50 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR STH10NA50/FI STW10NA50
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STH10NA50 STH10NA50FI STW10NA50
s s s s s s s
V DSS 500 V 500 V 500 V
R DS( on) < 0.8 Ω < 0.8 Ω < 0.8 Ω
ID 9.6 A 5.6 A 9.6 A
TO-247
TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALAN  ST Microelectronics transistor | | |
| 3 | STW10NB60 | N-CHANNEL Power MOSFET ®
STW10NB60
N - CHANNEL 600V - 0.69Ω - 10A - TO-247 PowerMESH™ MOSFET
TYPE ST W10NB60
s s s s s
V DSS 600 V
R DS(on) < 0.8 Ω
ID 10 A
TYPICAL RDS(on) = 0.69 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
1 2
3
DESCRIPTION ST Microelectronics mosfet | | |
| 4 | STW10NC60 | N-CHANNEL Power MOSFET N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET
TYPE STW10NC60 STH10NC60FI
s s s s s
STW10NC60 STH10NC60FI
VDSS 600 V 600 V
RDS(on) < 0.75 Ω < 0.75 Ω
ID 10 A 10 A (*)
TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BEN ST Microelectronics mosfet | | |
| 5 | STW10NC70Z | N-CHANNEL Power MOSFET N-CHANNEL 700V - 0.58 Ω - 10.6A TO-247 Zener-Protected PowerMESH™III MOSFET
TYPE STW10NC70Z
s s
STW10NC70Z
VDSS 700 V
RDS(on) < 0.75 Ω
ID 10.6 A
s s s
TYPICAL RDS(on) = 0.58 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANC ST Microelectronics mosfet | | |
| 6 | STW10NK60Z | N-channel Power MOSFET ST Microelectronics mosfet | | |
| 7 | STW10NK80Z | N-CHANNEL Power MOSFET STP10NK80Z, STP10NK80ZFP, STW10NK80Z
N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages
Datasheet — production data
Features
TAB
Type STP10NK80Z STP10NK80ZFP STW10NK80Z
VDSS 800V 800V 800V
RDS(on) <0.90Ω <0.90Ω <0.90Ω
ID 9A 9A ST Microelectronics mosfet | |
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