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PDF STW58N60DM2AG Data sheet ( Hoja de datos )
| Número de pieza | STW58N60DM2AG | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STW58N60DM2AG
Automotive-grade N-channel 600 V, 0.052 Ω typ., 50 A
MDmesh™ DM2 Power MOSFET in a TO-247 package
Datasheet - production data
Features
Order code
STW58N60DM2AG
VDS
600 V
RDS(on)
max.
0.060 Ω
ID
50 A
PTOT
360 W
3
2
1
TO-247
Figure 1: Internal schematic diagram
D(2)
G(1)
S(3)
AM15572v1_no_tab
Designed for automotive applications and
AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STW58N60DM2AG
Table 1: Device summary
Marking
58N60DM2
Package
TO-247
Packing
Tube
July 2015
DocID027912 Rev 2
This is information on a product in full production.
1/12
www.st.com
1 page  
STW58N60DM2AG
Symbol Parameter
ISD
Source-drain
current
Source-drain
ISDM current
(pulsed)
VSD(1)
Forward on
voltage
trr
Reverse
recovery time
Reverse
Qrr recovery
charge
Reverse
IRRM recovery
current
trr
Reverse
recovery time
Reverse
Qrr recovery
charge
Reverse
IRRM recovery
current
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
- 50 A
- 200 A
VGS = 0 V, ISD = 50 A
ISD = 50 A, di/dt = 100 A/µs, VDD = 60 V
(see Figure 16: "Test circuit for inductive
load switching and diode recovery times")
- 1.6 V
- 140
ns
- 0.7
µC
- 10.6
A
- 245
ISD = 50 A, di/dt = 100 A/µs, VDD = 60 V,
Tj = 150 °C (see Figure 16: "Test circuit for - 2.6
inductive load switching and diode
recovery times")
- 21
ns
µC
A
Notes:
(1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027912 Rev 2
5/12
5 Page 
STW58N60DM2AG
Revision history
5 Revision history
Date
Table 10: Document revision history
Revision
Changes
12-Jun-2015
20-Jul-2015
1 First release.
Updated title and features.
2
Minor text changes.
DocID027912 Rev 2
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STW58N60DM2AG.PDF ] | |
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