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PDF STW58N65DM2AG Data sheet ( Hoja de datos )
| Número de pieza | STW58N65DM2AG | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
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STW58N65DM2AG
Automotive-grade N-channel 650 V, 0.058 Ω typ., 48 A
MDmesh™ DM2 Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
STW58N65DM2AG
VDS
650 V
RDS(on) max.
0.065 Ω
ID
48 A
PTOT
360 W
Designed for automotive applications and
AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STW58N65DM2AG
Table 1: Device summary
Marking
58N65DM2
Package
TO-247
Packing
Tube
September 2015
DocID028347 Rev 2
This is information on a product in full production.
1/12
www.st.com
1 page  
STW58N65DM2AG
Symbol
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 8: Source-drain diode
Test conditions
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery
time
Reverse recovery
charge
Reverse recovery
current
VGS = 0 V, ISD = 48 A
ISD = 48 A, di/dt = 100 A/µs,
VDD = 100 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
Reverse recovery
time
Reverse recovery
charge
Reverse recovery
current
ISD = 48 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
Electrical characteristics
Min.
-
Typ.
Max. Unit
48 A
- 192 A
- 1.6 V
- 135
ns
- 0.68
µC
- 10
A
- 260
ns
- 2.75
µC
- 21
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID028347 Rev 2
5/12
5 Page 
STW58N65DM2AG
Revision history
5 Revision history
Date
09-Sep-2015
15-Sep-2015
Table 10: Document revision history
Revision
Changes
1 Initial release.
In section Electrical characteristics (curves):
2
- updated figure Safe operating area
DocID028347 Rev 2
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STW58N65DM2AG.PDF ] | |
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