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PDF STW62N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STW62N65M5 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STW62N65M5
Automotive-grade N-channel 650 V, 0.041 Ω typ., 46 A
MDmesh™ V Power MOSFET in a TO-247 package
Datasheet - production data
Features
3
2
1
TO-247
Figure 1. Internal schematic diagram
'
*
6
$0Y
Order code
STW62N65M5
VDS @
TJmax
710 V
RDS(on)
max
0.049 Ω
ID
46 A
• Designed for automotive applications and
AEQ-Q101 qualified
• Outstanding RDS(on) * area
• High VDS rating and high dv/dt capability
• Excellent switching performance
• 100% avalanche tested
Applications
• Switching applications
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order code
STW62N65M5
Table 1. Device summary
Marking
Package
62N65M5
TO-247
June 2013
This is information on a product in full production.
DocID024837 Rev 1
Packaging
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STW62N65M5
Electrical characteristics
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
VDD = 400 V, ID = 30 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17 and
Figure 20)
Min. Typ. Max Unit
- 101 - ns
- 11 - ns
- 8 - ns
- 14 - ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 46 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 46 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 17)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 46 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 17)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
-
-
-
-
46 A
184 A
1.5 V
448 ns
10 µC
43 A
548 ns
14 µC
51 A
DocID024837 Rev 1
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STW62N65M5
Dim.
A
A1
b
b1
b2
c
D
E
e
L
L1
L2
∅P
∅R
S
Package mechanical data
Table 9. TO-247 mechanical data
mm.
Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
3.55
4.50
5.30
Typ.
5.45
18.50
5.50
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
DocID024837 Rev 1
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