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PDF STW65N80K5 Data sheet ( Hoja de datos )
| Número de pieza | STW65N80K5 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
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STW65N80K5
N-channel 800 V, 0.07 Ω typ., 46 A MDmesh™ K5
Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max. ID
PTOT
STW65N80K5 800 V
0.08 Ω
46 A 446 W
Industry’s lowest RDS(on) x area
Industry’s best figure of merit (FoM)
Ultra low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STW65N80K5
Table 1: Device summary
Marking
Package
65N80K5
TO-247
Packing
Tube
October 2015
DocID027717 Rev 2
This is information on a product in full production.
1/12
www.st.com
1 page  
STW65N80K5
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 46 A
ISD = 46 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 15:
"Test circuit for inductive load
switching and diode recovery
times")
- 46 A
- 184 A
- 1.5 V
- 650
ns
- 20
µC
- 60
A
trr Reverse recovery time
ISD = 46 A, di/dt = 100 A/µs,
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C (see
Figure 15: "Test circuit for
IRRM
Reverse recovery current inductive load switching and
diode recovery times")
- 845
- 28
- 66
ns
µC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±1 mA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID027717 Rev 2
5/12
5 Page 
STW65N80K5
Revision history
5 Revision history
Date
21-May-2015
02-Oct-2015
Revision
1
2
Table 11: Document revision history
Changes
First release.
Text and formatting changes throughout document.
Datasheet status promoted from preliminary to production data.
On cover page:
- updated title description and Features table.
Updated sections - Electrical ratings and Electrical characteristics.
Added section - Electrical characteristics (curves).
DocID027717 Rev 2
11/12
11 Page | ||
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