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Numéro de référence | STW70N60DM2 | ||
Description | N-CHANNEL MOSFET | ||
Fabricant | STMicroelectronics | ||
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1 Page
STW70N60DM2
N-channel 600 V, 0.037 Ω typ., 66 A MDmesh™ DM2
Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
STW70N60DM2
VDS
600 V
RDS(on) max.
0.042 Ω
ID
66 A
PTOT
446 W
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STW70N60DM2
Table 1: Device summary
Marking
70N60DM2
Package
TO-247
Packing
Tube
December 2015
DocID026843 Rev 4
This is information on a product in full production.
1/12
www.st.com
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Pages | Pages 12 | ||
Télécharger | [ STW70N60DM2 ] |
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