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PDF STWA20N95K5 Data sheet ( Hoja de datos )
| Número de pieza | STWA20N95K5 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STWA20N95K5
N-channel 950 V, 0.275 Ω, 17.5 A SuperMESH™ 5 Power MOSFET
in TO-247 long leads package
Datasheet - preliminary data
Features
3
2
1
TO-247 long leads
Figure 1. Internal schematic diagram
D(2)
G(1)
Order codes
VDSS
RDS(on)
max
ID
PW
STWA20N95K5 950 V 0.330 Ω 17.5 A 250 W
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using SuperMESH™ 5 technology.
This revolutionary, avalanche-rugged, high
voltage Power MOSFET technology is based on
an innovative proprietary vertical structure. The
result is a drastic reduction in on-resistance and
ultra low gate charge for applications which
require superior power density and high
efficiency.
S(3)
AM01476v1
Order codes
STWA20N95K5
Table 1. Device summary
Marking
Package
20N95K5
TO-247 long leads
Packaging
Tube
November 2013
DocID025573 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/12
www.st.com
1 page  
STWA20N95K5
Electrical characteristics
Symbol
Table 6. Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 475 V, ID = 9 A,
RG=4.7 Ω, VGS=10 V
(see Figure 17)
Min. Typ. Max. Unit
- 17 - ns
- 12 - ns
- 70 - ns
- 20 - ns
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
- 17.5 A
ISDM Source-drain current (pulsed)
(1)
VSD Forward on voltage
ISD= 17.5 A, VGS=0
-
-
70 A
1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
- 530
ISD= 17.5 A, VDD= 60 V
di/dt = 100 A/μs,
- 12
(see Figure 16)
- 44
ns
μC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 17.5 A,VDD= 60 V
di/dt=100 A/μs,
Tj=150 °C
(see Figure 16)
- 650
- 14
- 77
ns
μC
A
1. Pulsed: pulse duration = 300μs, duty cycle 1.5%
Symbol
Table 8. Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)GSO Gate-source breakdown voltage IGS= ± 1 mA, ID= 0
30 - - V
The built-in-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
DocID025573 Rev 1
5/12
12
5 Page 
STWA20N95K5
5 Revision history
Revision history
Date
21-Nov-2013
Table 10. Document revision history
Revision
Changes
1 First release.
DocID025573 Rev 1
11/12
12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STWA20N95K5.PDF ] | |
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