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PDF STWA88N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STWA88N65M5 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | STMicroelectronics | |
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STW88N65M5
STWA88N65M5
N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh™ V
Power MOSFET in TO-247 and TO-247 long leads packages
Datasheet - production data
Features
3
2
1
TO-247
TO-247 long leads
Figure 1. Internal schematic diagram
'
*
6
$0Y
Order codes
STW88N65M5
STWA88N65M5
VDSS
@Tjmax.
710 V
RDS(on) max.
< 0.029 Ω
ID
84 A
• Worldwide best RDS(on) in TO-247
• Higher VDSS rating
• Higher dv/dt capability
• Excellent switching performance
• Easy to drive
• 100% avalanche tested
Applications
• High efficiency switching applications:
– Servers
– PV inverters
– Telecom infrastructure
– Multi kW battery chargers
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order codes
STW88N65M5
STWA88N65M5
Table 1. Device summary
Marking
Packages
88N65M5
TO-247
TO-247 long leads
Packaging
Tube
April 2013
This is information on a product in full production.
DocID022522 Rev 4
1/15
www.st.com
15
1 page  
STW88N65M5, STWA88N65M5
Electrical characteristics
Symbol
Parameter
td(V)
tr(V)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Table 6. Switching times
Test conditions
VDD = 400 V, ID = 56 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
(see Figure 20)
Min. Typ. Max. Unit
141 ns
16 ns
--
29 ns
56 ns
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 84 A, VGS = 0
ISD = 84 A,
di/dt = 100 A/µs
VDD = 100 V (see Figure 17)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 84 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 17)
-
-
-
-
84 A
336 A
1.5 V
544 ns
14 µC
50 A
660 ns
20 µC
60 A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID022522 Rev 4
5/15
5 Page 
STW88N65M5, STWA88N65M5
Package mechanical data
Figure 21. TO-247 drawing
0075325_G
DocID022522 Rev 4
11/15
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