|
|
Numéro de référence | T835-600G | ||
Description | HIGH PERFORMANCE TRIAC | ||
Fabricant | STMicroelectronics | ||
Logo | |||
1 Page
T835-600G
® T850-600G
HIGH PERFORMANCE TRIAC
FEATURES
HIGH COMMUTATION PREFORMANCES
SNUBBERLESSTM TECHNOLOGY
HIGH NOISE IMMUNITY (dV/dt)
HIGH ITSM
DESCRIPTION
The T835-600G and T850-600G triacs are using
high performance SNUBBERLESS technology.
They are intended for AC control applications
using surface mount tecnology.
These devices are perfectly suited where high
commutation and surge performances are
required.
A2
A2 G
A1
D2PAK
ABSOLUTE RATINGS (limiting values)
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
T
Parameter
Repetitive peak off-state voltage
Tj = 125°C
RMS on-state current
(360° conduction angle)
Tc= 110°C
Non repetitive surge peak on-state current
(Tj initial = 25°C)
I2t Value for fusing
tp = 8.3ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
IG = 500 mA dIG /dt = 1 A/µs.
Repetitive
F = 50 Hz
Non Repetitive
Storage temperature range
Operating junction temperature range
Maximum temperature for soldering during 10s
Value
600
Unit
V
8A
85 A
80
32 A2s
20 A/µs
100
- 40, + 150
- 40, + 125
260
°C
°C
May 1998 - Ed: 3A
1/5
|
|||
Pages | Pages 5 | ||
Télécharger | [ T835-600G ] |
No | Description détaillée | Fabricant |
T835-600B | (T835-xxxB) HIGH PERFORMANCE TRIACS | STMicroelectronics |
T835-600B | TRIACS | TGS |
T835-600G | HIGH PERFORMANCE TRIAC | STMicroelectronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |