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PDF TN2010T Data sheet ( Hoja de datos )
| Número de pieza | TN2010T | |
| Descripción | N-Channel Enhancement-Mode MOSFET Transistor | |
| Fabricantes | Siliconix | |
| Logotipo |  |
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TN2010T
N-Channel Enhancement-Mode MOSFET Transistor
Product Summary
V(BR)DSS Min (V)
200
rDS(on) Max (W)
11
VGS(th) (V)
0.8 to 3.0
ID (A)
0.12
Features
D Low On-Resistance: 9.5 W
D Secondary Breakdown Free: 220 V
D Low Power/Voltage Driven
D Low Input and Output Leakage
D Excellent Thermal Stability
Benefits
D Low Offset Voltage
D Full-Voltage Operation
D Easily Driven Without Buffer
D Low Error Voltage
D No High-Temperature
“Run-Away”
Applications
D High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D Telephone Mute Switches, Ringer Circuits
D Power Supply, Converters
D Motor Control
TO-236
(SOT-23)
G1
S2
3D
Top View
TN2010T (R1)*
*Marking Code for TO-236
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 150_C)
Pulsed Drain Currenta
TA= 25_C
TA= 70_C
Power Dissipation
Maximum Junction-to-Ambient
TA= 25_C
TA= 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
200
"20
0.12
0.08
0.34
0.35
0.22
357
–55 to 150
V
A
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70203.
Siliconix
S-52426—Rev. C, 14-Apr-97
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TN2010T.PDF ] | |
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