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Número de pieza | BCX55 | |
Descripción | Plastic-Encapsulate Transistors | |
Fabricantes | WILLAS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCX55 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
BCX55
FM120-M+
THRU
BCX56 FM1200-M
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
TRANSIS•• HHTiiOgghhRscuu(NrrgrePenNct ac)paapbaibliitlyit.y, low forward voltage drop.
• Guardring for overvoltage protection.
FEATUR••ESUSilltircaohnigehp-itsapxeiaeldpslawnitacrhcinhgip. , metal silicon junction.
z PNP• LCeoamd-fpreleempaerntstsmteoetBeCnvXir5on1m,BeCntXal5s2ta,BndCaXrd5s3of
z
Low•
VRMooIHLlt-SaSgpTreDod-1uc9t5f0o0r
/228
packing
code
suffix
"G"
z High HCaulorgreennftree product for packing code suffix "H"
z Pb-FMreechpaacnkiacgaelids avtailable
RoH•SEpporxoyd: uUcLt94fo-Vr 0praactekdinflgamceordeetasrduafnfitx ”G”
Halo• gCeansef:reMeolpderod dpluacstticfo, Sr OpDa-c1k2i3nHg code suffix “H”
• Terminals :Plated terminals, solderable per MIL-STD-75
,
0
Method 2026
APPLIC•APToIlOarNityS: Indicated by cathode band
z Driv•eMr oSutnatginegsPoosfitAiound:iAonAy mplifiers
Package outline
SOD-123H
SOT-89
0.146(3.7)
0.130(3.3)
1. BASE
2. COLLECTOR
3. EMITTER
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
• Weight : Approximated 0.011 gram
MARKING: BCMXA5X5I:MBEU,MBRCAXT5IN5G-1S0:ABNGD, BECLEXC5T5R-1I6CBAML CHARACTERISTICS
Ratings at 25B℃CXam5b6ie:nBt Htem, pBeCratXur5e6u-n1le0s:sBoKthe, rBwiCseXs5pe6c-i1fie6d:.BL
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
12 13 14 15 16
VRRM
20
30
40
50
60
18 10
115 120
80 100 150 200
MAMXaxIiMmuUmMRMRSAVTolItNagGe S (Ta=25℃ unless otheVRrwMSise n1o4ted) 21
28
Maximum DC Blocking Voltage
MSayxmimbuoml Average Forward RectifiedPCaurarrmenet ter
VDC 20 30 40
Value
IO
PsueVpaekCrBiFmOoprwosaerdd
SuCrgoelleCcurtroern-tB8a.3smesVsoinlgtaleghealf
on rated load (JEDEC method)
sine-wBaCveX55IFSM
60
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
OpVeCraEtOing TempCeorallteucretoRra-Engmeitter Voltage
Storage Temperature Range
BCX56RΘJA
CJ
BCX55 TJ
BCX56TSTG
100
-55 to +61025
80
35
50
Unit
V
V
42
60
1.0
30
56
80
70
100
40
120
- 65 to +175
-55 to +150
105
150
140
200
VEBO
EmitCteHrA-BRAaCseTEVRoISltaTgICeS
SYMBOL FM120-MH FM130-M5H FM140-MH FM15V0-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
MaxIimC um ForwCarodlVleoclttaogreCaut 1rr.0eAntDC
Maximum Average Reverse Current at @T A=25℃
RatPedCDC
Collector Power
Blocking Voltage
Dissipation
@T A=125℃
VF
IR
01.50
500
A 0.70
mW
0.5
10
0.85
0.9 0.92
RθJA
Thermal Resistance From Junction To Ambient
250
℃/W
NOTES:
1- MeTajsured at 1JMuHnZctaiondnaTpepmliedperervaetruserevoltage of 4.0 VDC.
150 ℃
2- TThestrgmal ResisStatnocreaFgreomTeJumncptieornattouArembient
-55~+150
℃
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet BCX55.PDF ] |
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