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SeCoS - NPN Silicon Plastic-Encapsulate Transistor

Numéro de référence BCX70J
Description NPN Silicon Plastic-Encapsulate Transistor
Fabricant SeCoS 
Logo SeCoS 





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BCX70J fiche technique
Elektronische Bauelemente
BCX70J
NPN Silicon
Plastic-Encapsulate Transistor
FEATURES
Low Current
Low Voltage
MARKING : AJ
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
Collector


Base

Emitter
SOT-23
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
- 0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)
PARAMETER
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissapation
Junction, Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
RATINGS
45
45
5
200
250
150, -55~150
UNIT
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Output Capacitance
Noise Figure
Gain-Bandwidth Product
TEST CONDITIONS
IC=10µA, IE =0
IC=2mA, IB =0
IE=1µA, IC =0
VCE=45V, VBE =0
VCE=5V, IC=10µA
VCE=5V, IC=2mA
VCE=1V, IC=50mA
IC =10mA, IB =0.25mA
IC =50mA, IB =1.25mA
IC=10mA, IB=-0.25mA
IC=50mA, IB=1.25mA
VCE=5V, IC=2mA
VCB=10V, IE =0, f =1MHz
VCE=5V,IC=200µA,f=1KHZ,
BW=200HZ,RS=2K
VCE =5V, IC=10mA,f=100MHz
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICES
hFE1
hFE2
hFE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VBE
COB
NF
FT
MIN.
45
45
5
30
250
90
0.05
0.1
0.6
0.7
0.55
100
TYP.
MAX.
20
UNIT
V
V
V
nA
460
0.35 V
0.55 V
0.85 V
1.05 V
0.75 V
1.7 pF
6 dB
250 MHz
http://www.SeCoSGmbH.com/
26-Oct-2009 Rev. B
Any changes of specification will not be informed individually.
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