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Numéro de référence | D965 | ||
Description | NPN Transistor | ||
Fabricant | WEJ | ||
Logo | |||
1 Page
RoHS
D965
D965 TRANSISTOR (NPN)
TO-92
TDFEATURES
.,LPower dissipation
PCM: 0.75 W (Tamb=25℃)
OCollector current
ICM: 5 A
CCollector-base voltage
V(BR)CBO:
42 V
Operating and storage junction temperature range
ICTJ, Tstg: -55℃ to +150℃
1. EMITTER
2. COLLECTOR
3. BASE
123
NELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
OCollector-base breakdown voltage
RCollector-emitter breakdown voltage
TEmitter-base breakdown voltage
CCollector cut-off current
EEmitter cut-off current
ELDC current gain
JCollector-emitter saturation voltage
Symbol
Test conditions
MIN
V(BR)CBO
Ic=1mA, IE=0
42
V(BR)CEO
Ic= 1mA, IB=0
22
V(BR)EBO
IE= 10µA, IC=0
6
ICBO VCB= 30V, IE=0
IEBO VEB= 6V, IC=0
hFE(1)
VCE= 2V, IC= 0.15 mA
150
hFE(2)
VCE= 2V, IC = 500 mA
340
hFE(3)
VCE=2V, IC = 2000 mA 150
VCE(sat) IC=3000mA, IB=100 mA
TYP
MAX
0.1
0.1
950
0.35
UNIT
V
V
V
µA
µA
V
WECLASSIFICATION OF hFE(2)
Rank
RT
Range
340-600
560-950
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Pages | Pages 1 | ||
Télécharger | [ D965 ] |
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