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1N3765 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
9 | 1N3765 | Diode Switching 700V 40A 2-Pin DO-5 | New Jersey Semiconductor |
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8 | 1N3765 | Silicon Power Rectifier | Microsemi Corporation |
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7 | 1N3765 | 35/40/and 60 Amp Power Silicon Rectifier Diodes | International Rectifier |
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6 | 1N3765 | Power Silicon Rectifier Diodes 1N1183, 1N3765, 1N1183A, 1N2128A Series
Vishay High Power Products
Power Silicon Rectifier Diodes, 35 A/40 A/60 A
DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent | Vishay |
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5 | 1N3765R | Silicon Standard Recovery Diode Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 700 V to 1000 V VRRM • Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N3765 thru 1N3768R
VR | GeneSiC |
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4 | 1N3765 | Silicon Standard Recovery Diode Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 700 V to 1000 V VRRM • Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N3765 thru 1N3768R
VR | GeneSiC |
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3 | 1N3765 | STANDARD RECOVERY RECTIFIERS 1N1183-1N1190, 1N3765-1N3768
High-reliability discrete products and engineering services since 1977
STANDARD RECOVERY RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to | Digitron Semiconductors |
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2 | 1N3765R | (1N3765 - 1N3768R) Silicon Standard Recovery Diode Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
| America Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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