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Datasheet 2N2609 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2N2609 | P-Channel Silicon Junction Field-Effect Transistor 8/2014
2N2608, 2N2609
P-Channel Silicon Junction Field-Effect Transistor
∙ Low-Level Choppers ∙ Data Switches ∙ Commutators
Absolute maximum ratings at TA = 25oC
Reverse Gate Source & Gate Drain Voltage -30V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation 300 |
 InterFET |
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| 4 | 2N2609 | JFET GENERAL PURPOSE 2N2608 2N2609
CASE 22-03, STYLE 12
TO-18 (TO-206AA) JFET
GENERAL PURPOSE
—P-CHANNEL DEPLETION
Refer to 2N5460 for graphs.
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Gate Current
@Total Device Dissipation T/^ = 25°C
Derate above 25°C Storage Temperature R |
 Motorola Semiconductors |
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| 3 | 2N2609 | POWER MOSFET P CHANNEL Technical Data
2N2609 JAN POWER MOSFET P CHANNEL
Processed per MIL-PRF-19500/296
…DESIGNED FOR GENERAL PURPOSE SMALL SIGNAL SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (TA = 250C unless otherwise noted) Parameters / Test Conditions Symbol Value Gate-Source Voltage VGSS 30 0 Powe |
 NES |
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| 2 | 2N2609 | P-CHANNEL J-FET TECHNICAL DATA
P-CHANNEL J-FET
Qualified per MIL-PRF-19500/296 Devices 2N2609 Qualified Level JAN
ABSOLUTE MAXIMUM RATINGS (TA = +250C unless otherwise noted) Parameters / Test Conditions Symbol Value
Gate-Source Voltage Power Dissipation (1) TA = +250C Operating Junction & Storage Temperature Rang |
 Microsemi Corporation |
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