| No | Part number | Description ( Function ) | Manufacturers | |
| 10 | 2N2857 | HIGH FREQUENCY TRANSISTOR 2N2857 2N3839 2N2857 JAN, JTX, JTXV AVAILABLE CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation T/ = 25°C Derate above 25°C @Total Device Dissipation Trj = 25°C Derate above 25°C Storage Temperatur |
 Motorola Semiconductors |
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| 9 | 2N2857 | NPN SILICON RF TRANSISTORS 2N2857 2N3839 NPN SILICON RF TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2857 and 2N3839 are silicon NPN RF transistors designed for VHF/UHF amplifier, oscillator and converter applications. MARKING: FULL PART NUMBER TO-72 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emit |
 Central Semiconductor |
|
| 8 | 2N2857 | NPN TRANSISTOR 2N2857 MECHANICAL DATA Dimensions in mm (inches) 4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178) NPN TRANSISTOR 5.33 (0.210) 4.32 (0.170) FEATURES • SILICON NPN TRANSISTOR 12.7 (0.500) min. 0.48 (0.019) 0.41 (0.016) dia. APPLICATIONS: • AMPLIFIER, OSCILLATOR AND CONVERTER APPLICATIONS UP TO 500MHz 2.54 (0.100) Nom. 4 3 2 1 TO-72 METAL PACKAGE ABSOLUTE MAXIMUM |
 Seme LAB |
|
| 7 | 2N2857 | Type 2N2857 Geometry 0011 Polarity NPN Data Sheet No. 2N2857 Type 2N2857 Geometry 0011 Polarity NPN Qual Level: JAN - JANS Features: • • • • Low power, ultra-high frequency transistor. Housed in TO-72 case. Also available in chip form using the 0011 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/343 which Semicoa meets in all cases. Generic Part Number: 2N2857 REF: MIL-PRF-19500/343 TO |
 Semicoa |
|
| 6 | 2N2857 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-72 packaged UHF Transistor 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: |
 Microsemi |
|
| 5 | 2N2857 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-72 packaged UHF Transistor 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: |
 Advanced Power Technology |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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