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2N2904E Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2N2904E | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50 | KEC |
Numéro de référence | fiche technique | Fabricant | |
2N2904 | (2N2904A - 2N2907A) PNP Silicon Annular Hermetic Transistors |
Motorola Semiconductors |
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2N2904 | PNP SWITCHING SILICON TRANSISTOR |
Microsemi Corporation |
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2N2904 | PNP SILICON PLANAR TRANSISTORS |
Siemens Semiconductor Group |
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2N2904 | GENERAL PURPOSE PNP TRANSISTOR |
Seme LAB |
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2N2904A | (2N2904A - 2N2907A) PNP Silicon Annular Hermetic Transistors |
Motorola Semiconductors |
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2N2904A | NPN SILICON PLANAR SWITCHING TRANSISTORS |
Boca Semiconductor Corporation |
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2N2904 | PNP SILICON PLANAR SWITCHING TRANSISTORS |
CDIL |
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2N2904A | Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
Seme LAB |
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2N2904A | Chip Type 2C2904A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
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2N2904 | GENERAL PURPOSE AMPLIFIER AND SWITCHES |
STMicroelectronics |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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