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Datasheet 2N2905A Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12N2905APNP SILICON TRANSISTORS

2N2904 2N2904A 2N2905 2N2905A PNP SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2904, 2N2905 series types are PNP silicon transistors manufactured by the epitaxial planar process, designed for small signal, general purpose and switching applicatio
Central Semiconductor
Central Semiconductor
transistor
22N2905APNP Silicon Transistor

Texas
Texas
transistor
32N2905AGENERAL PURPOSE AMPLIFIERS AND SWITCHES

2N2905A 2N2907A GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications. 2N
STMicroelectronics
STMicroelectronics
amplifier
42N2905AHIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR

LAB MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) SEME 2N2905A HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0
Seme LAB
Seme LAB
transistor
52N2905AType 2N2905A Geometry 0600 Polarity PNP

Data Sheet No. 2N2905A Type 2N2905A Geometry 0600 Polarity PNP Qual Level: JAN - JANS Features: • • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case. Also available in chip form using the 0600 chip geometry. The Min and Max limits shown
Semicoa Semiconductor
Semicoa Semiconductor
data


2N2 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12N20N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N20 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converte
Inchange Semiconductor
Inchange Semiconductor
mosfet
22N2000(2N2000 / 2N2001) alloy-junction germanium transistors

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c
ETC
ETC
transistor
32N2001(2N2000 / 2N2001) alloy-junction germanium transistors

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c
ETC
ETC
transistor
42N2017Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) 2N1975 NPN AMPL/SWITCH 2N1983 NPN AMPL/SWITCH 2N1984 NPN AMPL/SWITCH 2N1985 NPN AMPL/SWITCH 2N1986 NPN AMPL/SWITCH 2N1987 NPN AMPL/SWITCH 2N1988 NPN AMPL/SWITCH 2N1989 NPN AMPL/SWITCH 2N1990 NPN AMPL/SWITCH 2N2017 NPN A
Central Semiconductor
Central Semiconductor
transistor
52N2017Trans GP BJT NPN 60V 0.5A 6-Pin TO-78

New Jersey Semiconductor
New Jersey Semiconductor
data
62N2018Trans GP BJT NPN 60V 0.5A 6-Pin TO-78

New Jersey Semiconductor
New Jersey Semiconductor
data
72N2019Trans GP BJT NPN 60V 0.5A 6-Pin TO-78

New Jersey Semiconductor
New Jersey Semiconductor
data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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