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2N2906E Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2N2906E | EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE/ SWITCHING) SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
2N2906E
EPITAXIAL PLANAR PNP TRANSISTOR
B B1
FEATURES
: ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Volt | KEC(Korea Electronics) |
Numéro de référence | fiche technique | Fabricant | |
2N2906 | PNP switching transistors |
NXP Semiconductors |
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2N2906 | GENERAL PURPOSE AMPLIFIER AND SWITCHES |
STMicroelectronics |
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2N2906 | (2N2904A - 2N2907A) PNP Silicon Annular Hermetic Transistors |
Motorola Semiconductors |
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2N2906A | (2N2904A - 2N2907A) PNP Silicon Annular Hermetic Transistors |
Motorola Semiconductors |
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2N2906A | (2N2906/A) General Purpose Amplifier Transistors |
Comset Semiconductor |
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2N2906A | Chip Type 2C2904A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
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2N2906A | PNP SILICON PLANAR TRANSISTORS |
Siemens Semiconductor Group |
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2N2906 | SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
TT |
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2N2906 | (2N2906/A) General Purpose Amplifier Transistors |
Comset Semiconductor |
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2N2906E | EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE/ SWITCHING) |
KEC(Korea Electronics) |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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