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2N2907A Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
26 | 2N2907A | Trans GP BJT PNP 60V 0.6A 3-Pin TO-18 | New Jersey Semiconductor |
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25 | 2N2907A | (2N2907/A) General Purpose Amplifier Transistors PNP 2N2907 – 2N2907A GENERAL PURPOSE AMPLIFIERS TRANSISTORS
The 2N2907 and 2N2907A are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements a | Comset Semiconductor |
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24 | 2N2907A | GENERAL PURPOSE AMPLIFIERS AND SWITCHES 2N2905A 2N2907A
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
DESCRIPTION The 2N2905A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed satura | ST Microelectronics |
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23 | 2N2907A | Chip Type 2C2907A Geometry 0600 Polarity PNP Data Sheet No. 2N2907A
Type 2N2907A
Geometry 0600 Polarity PNP Qual Level: JAN - JANS
Features: • • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-18 case. Also available in chip form using the | Semicoa Semiconductor |
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22 | 2N2907A | HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR LAB
MECHANICAL DATA Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
SEME
2N2907A
HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR
5.33 (0.210) 4.32 (0.170)
FEATURES
• SILICON PLANAR EPITAXIAL PNP TRANSISTOR • HIG | Seme LAB |
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21 | 2N2907A | PNP switching transistors DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2907; 2N2907A PNP switching transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 30
Philips Semiconductors
Product specification
PNP | NXP Semiconductors |
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20 | 2N2907A | (2N2904A - 2N2907A) PNP Silicon Annular Hermetic Transistors
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| Motorola Semiconductors |
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19 | 2N2907A | PNP BIPOLAR TRANSISTOR 580 Pleasant St. Watertown, MA 02172 PH: (617) 926-0404 FAX: (617) 924-1235
2N2907A
Features
• • • • Meets MIL-S-19500/291 Collector-Base Voltage 60V Collector Current: 600 mAdc Fast Switching 345 nS
60 Volts 0.6 Amps
PNP BIPOLAR TRANSIST | Microsemi Corporation |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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