|
|
2N3012 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | 2N3012 | Bipolar PNP Device Dimensions in mm (inches).
m o .c U 4 t e e h S a at .D w w w
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
2N3012
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package.
0.48 (0.019) 0.41 (0.016) dia.
2.54 (0.100) Nom.
1 – Emit | Seme LAB |
|
3 | 2N3012CSM | Bipolar PNP Device Dimensions in mm (inches).
0.51 ± 0.10 (0.02 ± 0.004)
2.54 ± 0.13 (0.10 ± 0.005)
m o .c U 4 t e e h S a at .D w w w
0.31 rad. (0.012)
2N3012CSM
3
2
1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005)
1 – Base
Parameter VCEO* IC(C | Seme LAB |
|
2 | 2N3012 | SWITCHING TRANSISTOR 2N3012
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
SWITCHING TRANSISTOR
PNP SILICON
Refer to 2N869A for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissip | Motorola Semiconductors |
|
1 | 2N3012 | Small Signal Transistors Small Signal Transistors TO-18 Case (Continued)
TYPE NO.
DESCRIPTION
BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V)
MIN MIN MIN MAX *ICES **ICEV
hFE @ IC @ VCE VCE (SAT) @ IC Cob fT NF ton (mA) (V) (V) (mA) (pF) (MHz) (dB) (ns)
MIN MAX
MAX
| Central Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
|
B8524 | SAW Components |
TDK |
|
BA6343 | Stepping motor driver |
ROHM |
0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
www.DataSheetWiki.com | 2020 | Contactez-nous | Link | English |