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2N3020 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
6 | 2N3020 | NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | Micro Electronics |
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5 | 2N3020 | GENERAL TRANSISTOR NPN SILICON | Boca Semiconductor Corporation |
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4 | 2N3020 | Bipolar NPN Device 2N3020
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034) | Seme LAB |
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3 | 2N3020 | (2N3019 / 2N3020) SILICON PLANAR EPITAXIAL TRANSISTORS NPN 2N3019 – 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation vo | Comset Semiconductor |
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2 | 2N3020 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3019 2N3020
TO-39 Metal Can Package
Designed for use in General Purpose Amplifier and High Speed Switching Applications These | CDIL |
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1 | 2N3020 | Small Signal Transistors Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4 | Central |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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