|
|
2N3114CSM Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | 2N3114CSM | Bipolar NPN Device
2N3114CSM
Dimensions in mm (inches).
0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012)
2.54 ± 0.13 (0.10 ± 0.005)
3
2
1
1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A=
0.76 ± 0.15 (0.03 ± 0.006)
Bipolar NPN | Seme LAB |
|
1 | 2N3114CSM | SILICON PLANAR EPITAXIAL NPN TRANSISTOR SILICON PLANAR EPITAXIAL NPN TRANSISTOR
2N3114CSM
• High Voltage • Hermetic Ceramic Surface Mount Package • Designed For Low Noise General Purpose Amplifiers,
Driver Stages and Signal Processing Applications • Screening Options Available
AB | TT |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
|
B8524 | SAW Components |
TDK |
|
BA6343 | Stepping motor driver |
ROHM |
0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
www.DataSheetWiki.com | 2020 | Contactez-nous | Link | English |