2N3439 PDF Datasheet

2N3439 ® 2N3440 SILICON NPN TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and

2N3439 2N3440 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH VOLTAGE NPN TRANSISTORS FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH VOLTAGE 5.08 (0.200) typ. APPLICATIONS: 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 Devices 2N3439 2N3439L 2N3440 2N3440L Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3439 350 450 2N3440 250 300 Units Vdc Vdc Vdc Adc W

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN HIGH VOLTAGE SILICON TRANSISTORS IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 2N3439 2N3440 TO-39 High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified) DESCR

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ Ta = 50°C Derate above 50°C Operating and Storage Junction Temperature Range PIMP NPN Symbol 2N5