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2N3459 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | 2N3459 | TRANS JFET N-CH 3TO-18 | New Jersey Semiconductor |
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3 | 2N3459 | JFET LOW-FREQUENCY / LOW NOISE MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
@Total Device Dissipation T/^ = 25°C
Derate above 25°C Storage Temperature Range
Symbol VDG
. v GS
lG
PD
Tstg
Value 50 50 10 300
1.7
-65 to +175
Unit
Vdc
Vdc
mA
mW
mW/°C | Motorola Semiconductors |
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2 | 2N3459 | N-Channel Transistor | InterFET |
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1 | 2N3459 | N-Channel FET 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
| Central Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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