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2N3505 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
3 | 2N3505 | Trans GP BJT PNP 60V 3-Pin TO-18 Box | New Jersey Semiconductor |
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2 | 2N3505 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS 2N3502 2N3503 2N3504 2N3505
MECHANICAL DATA Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
5.33 (0.210) 4.32 (0.170)
12.7 (0.500) min.
FEATURES
• SILICON PLANAR EPITAXIAL PN | Seme LAB |
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1 | 2N3505 | Small Signal Transistors Small Signal Transistors TO-18 Case (Continued)
TYPE NO.
DESCRIPTION
BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V)
MIN MIN MIN MAX *ICES **ICEV
hFE @ IC @ VCE VCE (SAT) @ IC Cob fT NF ton (mA) (V) (V) (mA) (pF) (MHz) (dB) (ns)
MIN MAX
MAX
| Central Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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