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2N3558 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2N3558 | Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package 2N3558
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. Bipolar NPNP Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016 | Seme LAB |
Numéro de référence | fiche technique | Fabricant | |
2N3553 | Silicon planar epitaxial overlay transistor |
NXP Semiconductors |
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2N3553 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
Seme LAB |
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2N3553 | HIGH FREQUENCY TRANSISTOR |
Motorola Semiconductors |
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2N3553 | NPN SILICON RF TRANSISTOR |
ASI |
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2N3550 | Small Signal Transistors |
Central Semiconductor |
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2N3558 | Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package |
Seme LAB |
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2N3553 | Silicon planar epitaxial overlay transistor |
New Jersey Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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