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2N3716 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
8 | 2N3716M | Trans GP BJT NPN 80V 10A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
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7 | 2N3716 | Trans GP BJT NPN 80V 10A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
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6 | 2N3716 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 2N3716
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0 | Seme LAB |
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5 | 2N3716 | 10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N3715/D
Silicon NPN Power Transistors
. . . designed for medium–speed switching and amplifier applications. These devices feature: • • • • • Total Switching Time at 3 A typi | Motorola Inc |
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4 | 2N3716 | POWER TRANSISTORS(10A/150W) A
A
A
| Mospec Semiconductor |
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3 | 2N3716 | SILICON NPN POWER TRANSISTORS | Boca Semiconductor Corporation |
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2 | 2N3716 | NPN High Power Silicon Transistor 2N3715 & 2N3716
NPN High Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF19500/408
TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter Off Characteristics
Test Conditions
Symbol Units Min.
M | MA-COM |
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1 | 2N3716 | (2N3713 - 2N3716) EPITAXIAL-BASE TRANSISTORS NPN 2N3713 – 2N3714 – 2N3715 – 2N3716 EPITAXIAL-BASE TRANSISTORS
The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications | Comset Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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