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2N3734 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
6 | 2N3734A | Trans GP BJT NPN 30V 3-Pin TO-39 | New Jersey Semiconductor |
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5 | 2N3734 | Trans GP BJT NPN 30V 3-Pin TO-39 | New Jersey Semiconductor |
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4 | 2N3734 | Bipolar NPN Device in aHermetically sealed TO39 Metal Package 2N3734
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) | Seme LAB |
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3 | 2N3734 | GENERAL PURPOSE SILICON NPN TRANSISTOR GENERAL PURPOSE SILICON NPN TRANSISTOR
2N3734 / 2N3735
• Hermetic TO-39 Metal Package • General purpose amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
Symbols Parameters
2N3734
2N3735
VCBO
| TT |
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2 | 2N3734 | GENERAL PURPOSE TRANSISTOR 2N3734 2N3735
CASE 79, STYLE 1
TO-39 (TO-205AD)
2N3736 2N3737
CASE 26, STYLE 1
TO-46 (TO-206AD)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Refer to 2N3725 for graphs.
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base V | Motorola Semiconductors |
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1 | 2N3734 | NPN SILICON TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
| Central Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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