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Datasheet 2N3767 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | 2N3767 | SILICON NPN POWER TRANSISTORS 2N3766 2N3767
SILICON NPN POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767 are silicon NPN power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications.
MARKING: FULL |
Central Semiconductor |
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5 | 2N3767 | NPN Power Silicon Transistor 2N3766 & 2N3767
NPN Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF19500/518
TO-66 (TO-213AA) Package
Rev. V1
Electrical Characteristics
Parameter
Test Conditions
Symbol Units
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Emitter C |
MA-COM |
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4 | 2N3767 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3767
DESCRIPTION ·Continuous Collector Current IC= 4A ·Collector Power Dissipation-
: PC= 20W @TC= 25℃
APPLICATIONS ·Designed for power amplifier and medium speed
applications.
switching
ABSOLUTE MAXIMUM RA |
Inchange Semiconductor |
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3 | 2N3767 | NPN POWER SILICON TRANSISTOR TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/518 Devices 2N3766 2N3767 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Op |
Microsemi Corporation |
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Número de pieza | Descripción | Fabricantes | |
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