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2N3819 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
9 | 2N3819 | N-Channel JFET P-Channel Power MOSFET’s
Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS(V) ID(ON)(mA) RDS(ON)( Ω) Part No. Drain-Source Min. On-State Brkdwn. Voltg. DS Current BVDSS (V) I D(ON)(A) Typ. Static DS Re | Taitron Components |
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8 | 2N3819 | N-channel J-FET | NXP Semiconductors |
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7 | 2N3819 | JFET VHF/UHF Amplifier N-Channel-Depletion 2N3819 JFET VHF/UHF Amplifier
N–Channel – Depletion
MAXIMUM RATINGS
Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Storage Chan | ON Semiconductor |
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6 | 2N3819 | SFET RF/VHF/ UHF/ Amplitiers
2N3819
2N3819
N-Channel RF Amplifier
• This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92
1
1. Drain | Fairchild Semiconductor |
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5 | 2N3819 | N-Channel JFET N-Channel JFET
2N3819
Vishay Siliconix
PRODUCT SUMMARY
VGS(off) (V)
v –8
V(BR)GSS Min (V)
–25
gfs Min (mS)
2
IDSS Min (mA)
2
FEATURES
D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz
D Very Low Noise: 3 dB @ 400 MHz D Very Low Distorti | Vishay |
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4 | 2N3819 | N-Channel JFET N-Channel JFET
Product Summary
VGS(off) (V) v –8
V(BR)GSS Min (V) –25
gfs Min (mS) 2
IDSS Min (mA) 2
2N3819
Features
D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz
D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc S | TEMIC |
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3 | 2N3819 | N-Channel RF Amplifier 2N3819 N−Channel RF Amplifier
TO−92 Type Package
Description: The 2N3819 is a N−Channel RF Amplifier transistor designed for RF amplifier and mixer applications operating up to 450Mhz, and for analog switching requiring low capacitance.
Absol | NTE |
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2 | 2N3819 | JFET VHF/UHF AMPLIFIER 2N3819
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Reverse Gate-Source Voltage
Forward Gate Current
@Total Device Dissipation Ta = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol VDS Vdg vgsr
igf
| Motorola Semiconductors |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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