|
|
2N3866 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
16 | 2N3866 | Trans GP BJT NPN 30V 0.4A 3-Pin TO-39 | New Jersey Semiconductor |
|
15 | 2N3866 | Chip Type 2C3866A Geometry 1007 Polarity NPN Data Sheet No. 2C3866A
Chip Type 2C3866A Geometry 1007 Polarity NPN
Generic Packaged Parts: 2N3866, 2N3866A
Chip type 2C3866A by Semicoa Semiconductors provides performance similar to these devices.
Part Numbers: 2N3866A, 2N3866, 2N3866AUB, SD3866 | Semicoa Semiconductor |
|
14 | 2N3866 | Silicon planar epitaxial overlay transistors DISCRETE SEMICONDUCTORS
DATA SHEET
2N3866; 2N4427 Silicon planar epitaxial overlay transistors
Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27
Philips Semiconductors
Product specificati | NXP Semiconductors |
|
13 | 2N3866 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N3866 / 2N3866A
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Char | Microsemi Corporation |
|
12 | 2N3866 | Silicon Planar Epitaxial Transistors NPN 2N3866 SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N3866 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are intended for VHF-UHF class A, B or C amplifier circuits and oscillator applications. Com | Comset Semiconductor |
|
11 | 2N3866 | NPN SILICON HIGH FREQUENCY TRANSISTOR 2N3866
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39 DESCRIPTION:
The ASI 2N3866 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications.
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG θJC
O O
400 mA 30 V 5.0 W @ TC = | Advanced Semiconductor |
|
10 | 2N3866A | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 2N3866 / 2N3866A
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Curre | Advanced Power Technology |
|
9 | 2N3866 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 2N3866 / 2N3866A
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Curre | Advanced Power Technology |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
|
B8524 | SAW Components |
TDK |
|
BA6343 | Stepping motor driver |
ROHM |
0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
www.DataSheetWiki.com | 2020 | Contactez-nous | Link | English |