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2N3903 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
10 | 2N3903 | Diode ( Rectifier ) | American Microsemiconductor |
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9 | 2N3903 | NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications | Semtech Corporation |
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8 | 2N3903 | npn epitaxial silicon transistor | Samsung semiconductor |
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7 | 2N3903 | General Purpose Transistors(NPN Silicon) 2N3903, 2N3904
General Purpose Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − C | ON Semiconductor |
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6 | 2N3903 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS | Micro Electronics |
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5 | 2N3903 | NPN General Purpose Amplifier 2N3903
Discrete POWER & Signal Technologies
2N3903
C
BE
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 23. See 2N3904 f | Fairchild Semiconductor |
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4 | 2N3903 | Si-Epitaxial PlanarTransistors 2N3903, 2N3904 NPN
Version 2004-01-20
Switching Transistors Si-Epitaxial PlanarTransistors NPN
Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäus | Diotec Semiconductor |
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3 | 2N3903 | Small Signal General Purpose Transistors Small Signal General Purpose Transistors (NPN)
2N3903/2N3904
Small Signal General Purpose Transistors (NPN)
Features
• NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications
• RoHS Compliance
Mechanical Data
Case: Terminals: | TAITRON |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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