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Datasheet 2N3966 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2N3966 | JFET HIGH-FREQUENCY AMPLIFIER 2N3966
CASE 20-03, STYLE 1
TO-72 (TO-206AF)
JFET HIGH-FREQUENCY AMPLIFIER
—N-CHANNEL DEPLETION
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage
Gate-Source Voltage
Gate Current
@Total Device Dissipation Ta = 25°C
Derate above 25°C (Free Air) Lead Temperature
(1/16" from Case for |
 Motorola Semiconductors |
 |
| 1 | 2N3966 | Junction(2N3xxx) -Gate Field-Effect Transistor BV
GSS
VP Max. (V) 5.0 2.0 6.0 3.0 6.0 6.0 6.0 5.0 6.0
@
VD S (V) 20 20 15 10 15 15 10 20 10
&
ID Min. (nA) 1.0 1.0 0.5 1.0 1.0 1.0 10.0 1.0 1.0 (mmho) 2.00 1.00 3.00 0.08 2.50 -
Gfs Max. (mmho) 3.00 2.00 6.50 0.25 -
Part No.
Min. (V)
Min. (V) 2.0 0.6 1.0 2.5 2.5 4.0 2.0 |
 Taitron Components |
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