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Datasheet 2N4117A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N4117A | N-Channel Silicon Junction Field-Effect Transistor 8/2014 B17
2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A
N-Channel Silicon Junction Field-Effect Transistor
· Audio Amplifiers
· Ultra-High Input Impedance
Amplifiers
Absolute maximum ratings at TA = 25oC
Reverse Gate Source & Gate Drain Voltage -40V
Continuous Forward Gate Current
50 mA |  InterFET | transistor |
| 2 | 2N4117A | JFET |  Motorola Semiconductors | data |
| 3 | 2N4117A | N-Channel JFET General Purpose Amplifier N-Channel JFET General Purpose Amplifier
CORPORATION
2N4117 – 2N4119 / 2N4117A – 2N4119A PN4117 – PN4119 / PN4117A – PN4119A / SST4117 – SST4119
PIN CONFIGURATION FEATURES Leakage • Low • Low Capacitance
TO - 92
TO-72
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate- |  Calogic LLC | amplifier |
| 4 | 2N4117A | ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET LS4117, 4118, 4119
Linear Integrated Systems
ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET
FEATURES
LOW POWER MINIMUM CIRCUIT LOADING IDSS<90 µA (2N4117) IGSS<1 pA (2N4117A Series)
D
ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1) Gate-Cu |  Linear Integrated Systems | data |
| 5 | 2N4117A | N-Channel JFETs 2N/PN/SST4117A Series
Vishay Siliconix
N-Channel JFETs
2N4117A 2N4118A 2N4119A
PRODUCT SUMMARY
Part Number
4117 4118 4119
PN4117A SST4117 PN4118A SST4118 PN4119A SST4119
VGS(off) (V)
−0.6 to −1.8 −1 to −3 −2 to −6
V(BR)GSS Min (V)
−40 −40 −40
gfs Min (mS)
70 80 100
IDSS Min ( |  Vishay Siliconix | data |
2N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N40 | N-CHANNEL POWER MOSFET 2N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching perfo  Unisonic Technologies mosfet | | |
| 2 | 2N4000 | NPN Transistor OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datashee  Texas transistor | | |
| 3 | 2N4000 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N4000
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 80V
5.08 (0.200) typ.
I  Seme LAB data | | |
| 4 | 2N4000 | Trans GP BJT NPN 80V 1A 3-Pin TO-5 New Jersey Semiconductor data | | |
| 5 | 2N4001 | NPN Transistor OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datashee Texas transistor | | |
| 6 | 2N4001 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 2N4001
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 100V
5.08 (0.200) typ.
Seme LAB data | | |
| 7 | 2N4001 | Trans GP BJT NPN 100V 1A 3-Pin TO-5 New Jersey Semiconductor data | |
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