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2N4360 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | 2N4360 | P-CHANNEL FIELD EFFECT TRANSISTORS <^£mi-Conauctoi t-Proaucts., Una.
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081
UlSA 2N4342 - 2N4343 - 2N4360
TELEPHONE: (973) 376-2922 (212) 227-6005
FAX: (973) 376'8960
P-CHANNEL FIELD EFFECT TRANSISTORS DIFUSSED SILICON PLAN.4R TRANSSITORS
• | New Jersey Semiconductor |
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1 | 2N4360 | LOW-FREQUENCY/LOW-NOISE JFET 2N4360
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage
Gate-Source Voltage
@Total Device Dissipation T^ = 25°C
Derate above 25°C Storage Temperature Range
Symbol vDs Vdg vgs Pd
T stg
Value 20 20 20 310 2.82
-55 to +125
Unit
Vdc V | Motorola Semiconductors |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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