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Datasheet 2N4393 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N4393 | N-CHANNEL SILICON JFET 2N4391 2N4392 2N4393
N-CHANNEL SILICON JFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4391 series types are N-Channel silicon JFETs designed for analog switching and chopper applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C) Gate-Dr | Central Semiconductor | data |
2 | 2N4393 | JFET Switching | Motorola Semiconductors | data |
3 | 2N4393 | N-Channel JFETs 2N/PN/SST4391 Series
Vishay Siliconix
N-Channel JFETs
2N4391 2N4392 2N4393
PRODUCT SUMMARY
Part Number
2N/PN/SST4391 2N/PN/SST4392 2N/PN/SST4393
VGS(off) (V) –4 to –10
–2 to –5 –0.5 to –3
rDS(on) Max (W)
30 60 100
ID(off) Typ (pA)
5 5 5
tON Typ (ns)
4 4 4
PN4391 PN4392 PN4393
SS | Vishay | data |
4 | 2N4393 | SILICON SMALL SIGNAL N-CHANNEL JFET SILICON SMALL SIGNAL N-CHANNEL JFET
2N4393
• High Speed Switching. • Low On Resistance. • Designed For High Reliability and Space Applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VDS Drain – Source Voltage
40V
VGS Gate – Source Voltage
-40V
VGD
Gate – Dr | TT | data |
5 | 2N4393 | N-Channel JFET Switch N-Channel JFET Switch
CORPORATION
2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393
FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . | Calogic LLC | data |
2N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N40 | N-CHANNEL POWER MOSFET 2N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching perfo Unisonic Technologies mosfet | | |
2 | 2N4000 | NPN Transistor OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datashee Texas transistor | | |
3 | 2N4000 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N4000
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 80V
5.08 (0.200) typ.
I Seme LAB data | | |
4 | 2N4000 | Trans GP BJT NPN 80V 1A 3-Pin TO-5 New Jersey Semiconductor data | | |
5 | 2N4001 | NPN Transistor OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datashee Texas transistor | | |
6 | 2N4001 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 2N4001
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 100V
5.08 (0.200) typ.
Seme LAB data | | |
7 | 2N4001 | Trans GP BJT NPN 100V 1A 3-Pin TO-5 New Jersey Semiconductor data | |
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