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Datasheet 2N4911 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N4911 | Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·2N4912 complement to type 2N4900 APPLICATIONS ·Designed for driver circuits,switching and amplifier | SavantIC | transistor |
2 | 2N4911 | Trans GP BJT NPN 60V 4A 3-Pin(2+Tab) TO-66 | New Jersey Semiconductor | data |
3 | 2N4911X | NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE 2N4910X 2N4911X 2N4912X
MECHANICAL DATA Dimensions in mm (inches)
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 3.86 (0.145) rad.
NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE
APPLICATIONS
24.33 (0.958) 24.43 (0.962)
14.48 (0.570) 14.99 (0.590)
4.83 (0.190) 5.33 (0.21 | Seme LAB | transistor |
2N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N40 | N-CHANNEL POWER MOSFET 2N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching perfo Unisonic Technologies mosfet | | |
2 | 2N4000 | NPN Transistor OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datashee Texas transistor | | |
3 | 2N4000 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N4000
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 80V
5.08 (0.200) typ.
I Seme LAB data | | |
4 | 2N4000 | Trans GP BJT NPN 80V 1A 3-Pin TO-5 New Jersey Semiconductor data | | |
5 | 2N4001 | NPN Transistor OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datashee Texas transistor | | |
6 | 2N4001 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 2N4001
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 100V
5.08 (0.200) typ.
Seme LAB data | | |
7 | 2N4001 | Trans GP BJT NPN 100V 1A 3-Pin TO-5 New Jersey Semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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