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2N525 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | 2N525 | Trans GP BJT PNP 0.5A | New Jersey Semiconductor |
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145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com
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2 | 2N5252 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N5252
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) | Seme LAB |
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1 | 2N5252 | (2N5xxx) High Voltage Silicon Low and Medium Power Transistors ( DataSheet : )
| Semiconductor Technology |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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