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2N527 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
6 | 2N527 | Trans GP BJT PNP 0.5A | New Jersey Semiconductor |
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5 | 2N5270 | Trans GP BJT PNP 0.5A | New Jersey Semiconductor |
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4 | 2N527A | Trans GP BJT PNP 0.5A | New Jersey Semiconductor |
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3 | 2N527 | Trans GP BJT PNP 0.5A | New Jersey Semiconductor |
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2 | 2N5270 | GENERAL PURPOSE P-CHANNEL JFET MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Drain Current Forward Gate Current
@Total Device Dissipation T/ = 25°C
Derate above 25°C Junction Temperature Range Storage Temperature Range
Symbol vds vdg | Motorola Semiconductors |
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1 | 2N527 | (2N524 - 2N527) PNP Germanium Transistors w
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Central
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Semiconductor Corp.
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com
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S a | Central Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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