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Datasheet 2N5301 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | 2N5301 | Bipolar NPN Device 2N5301
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 |
 Seme LAB |
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| 7 | 2N5301 | Silicon NPN Power Transistors Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5301 2N5302 2N5303
DESCRIPTION With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent safe operating area
APPLICATIONS For use in power amplifier and switching
circuits applicati |
 Inchange Semiconductor |
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| 6 | 2N5301 | NPN SILICON POWER TRANSISTOR |
 SSDI |
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| 5 | 2N5301 | Bipolar Transistor Bipolar Transistor
Features:
• High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA • Low Collector Emitter saturation Voltage VCE(sat) 0.75V @ IC = 10A
NPN
Collector 3
2 Base
1 Emitter
Description:
High Power TO-3, NPN, Silicon Transistor Designed for use in power amplifi |
 Multicomp |
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