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2N5306 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | 2N5306 | NPN Darlington Transistor 2N5306
Discrete POWER & Signal Technologies
2N5306
C
BE
TO-92
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics | Fairchild Semiconductor |
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3 | 2N5306 | SILICON DARLINGTON TRANSISTORS | ETC |
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2 | 2N5306A | SILICON DARLINGTON TRANSISTORS | ETC |
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1 | 2N5306 | NPN SILICON DARLINGTON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
Central TM
Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com
| Central Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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