|
|
Datasheet 2N5551 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N5551 | Amplifier Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5550/D
Amplifier Transistors
NPN Silicon
COLLECTOR 3
2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipatio | Motorola Semiconductors | transistor |
2 | 2N5551 | Bipolar Transistor Bipolar Transistor
Collector 3
2 Base
1 Emitter
Maximum Ratings:
Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Total Device Dissipation (TA = +25°C), Derate above 25°C Total Device Dissipation(TC = +25°C), Derate above 2 | Multicomp | transistor |
3 | 2N5551 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V) ·Complements to 2N5401.
isc Product Specification
2N5551
APPLICATIONS ·Designed for Switching and amplification
in high voltage applications , | Inchange Semiconductor | transistor |
4 | 2N5551 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.)
MAXIMUM RATIN | KEC | transistor |
5 | 2N5551 | NPN General Purpose Amplifier 2N5551 / MMBT5551 — NPN General-Purpose Amplifier
June 2013
2N5551 / MMBT5551 NPN General-Purpose Amplifier
Description
This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers.
2N5551
MMBT5551
3
TO-92
2
1 SOT-23
Marking: 3S 1. Base 2. Emitter 3. C | Fairchild Semiconductor | amplifier |
2N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N5000 | NPN Silicon Power Transistor Texas transistor | | |
2 | 2N5000 | Trans GP BJT NPN 80V 2A 3-Pin TO-59 New Jersey Semiconductor data | | |
3 | 2N5001 | PNP Transistor 2 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mhaFEx
@Ic (A)
VmCEa(sxat) (V)
@(A)IC
mfTin (MHz)
mPaTx
*TC=100°C
(W)
Package
2N3205
2
40
20
60 Note 1 0.4
Note 1
Note 1
40
TO-59
2N32 SSDI transistor | | |
4 | 2N5001 | Trans GP BJT PNP 80V 2A 3-Pin TO-59 New Jersey Semiconductor data | | |
5 | 2N5002 | HIGH SPEED NPN TRANSISTOR SSDI transistor | | |
6 | 2N5002 | Type 2N5002 Geometry 9202 Polarity NPN Data Sheet No. 2N5002
Type 2N5002
Geometry 9202 Polarity NPN Qual Level: JAN - JANTXV
Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case. Also available in chip form using the 9202 chip geometry. The Min and Max limits shown Semicoa Semiconductor data | | |
7 | 2N5002 | (2N5002 / 2N5004) NPN POWER SILICON TRANSISTOR TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Symbol
VCEO VCBO VEBO IC IC(3) PT T Microsemi Corporation transistor | |
Esta página es del resultado de búsqueda del 2N5551. Si pulsa el resultado de búsqueda de 2N5551 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |