|
|
Datasheet 2N5551S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2N5551S | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA Low Noise : NF=8dB (Max.)
MAXIMUM RATING |
 KEC |
 |
| 1 | 2N5551SC | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
|
KEC |
|
| Esta página es del resultado de búsqueda del 2N5551S. Si pulsa el resultado de búsqueda de 2N5551S se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |