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2N5607 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
3 | 2N5607 | Bipolar PNP Device 2N5607
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar PNP Device in a Hermetically sealed TO66
Metal Package.
Bipolar PNP Device. VCEO = 80V IC = 5A
24.13 (0.95) 24.63 (0.9 | Seme LAB |
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2 | 2N5607 | COMPLEMENTARY SILICON POWER TRANSITORS Central TM
Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com
| Central Semiconductor |
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1 | 2N5607 | (2N5605 - 2N5611) Silicon PNP Power Transistors SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and sw | SavantIC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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