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2N5610 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | 2N5610 | Bipolar NPN Device 2N5610
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar NPN Device in a Hermetically sealed TO66
Metal Package.
Bipolar NPN Device. VCEO = 80V IC = 5A
24.13 (0.95) 24.63 (0.9 | Seme LAB |
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1 | 2N5610 | (2N5606 - 2N5612) Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5606 2N5608 2N5610 2N5612
DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For gene | SavantIC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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