|
|
2N5630 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
5 | 2N5630 | Trans GP BJT NPN 120V 16A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
|
4 | 2N5630 | Bipolar NPN Device 2N5630
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0 | Seme LAB |
|
3 | 2N5630 | COMPLEMENTARY SILICON POWER TRANSISTORS | Central Semiconductor Corp |
|
2 | 2N5630 | Power Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5630/D
High-Voltage Ċ High Power Transistors
. . . designed for use in high power audio amplifier applications and high voltage
switching regulator circuits.
• High Collector Emit | Motorola Semiconductors |
|
1 | 2N5630 | (2N5629 / 2N5630) Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5629 2N5630
DESCRIPTION ·With TO-3 package ·Complement to type 2N6029 2N6030 APPLICATIONS ·For high voltage and high power amplifier applications
| SavantIC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
|
B8524 | SAW Components |
TDK |
|
BA6343 | Stepping motor driver |
ROHM |
0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
www.DataSheetWiki.com | 2020 | Contactez-nous | Link | English |